Showing 41-60 of 64,468 items.
ImagePart NumberDescriptionIn StockQuantity
NGTB75N65FL2WG
ON Semiconductor
Transistors-IGBTs - Single
IGBT 600V 75A TO247
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) : 650V
  • Current - Collector (Ic) (Max) : 100A
  • Current - Collector Pulsed (Icm) : 200A
  • Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 75A
  • Power - Max : 595W
  • Switching Energy : 1.5mJ (on), 1mJ (off)
  • Input Type : Standard
  • Gate Charge : 310nC
  • Td (on/off) @ 25°C : 110ns/270ns
  • Test Condition : 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 80ns
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247
509
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STGP3HF60HD
STMicroelectronics
Transistors-IGBTs - Single
IGBT BIPO 600V 3A TO220
  • Manufacturer : STMicroelectronics
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 7.5A
  • Current - Collector Pulsed (Icm) : 18A
  • Vce(on) (Max) @ Vge, Ic : 2.95V @ 15V, 1.5A
  • Power - Max : 38W
  • Switching Energy : 19µJ (on), 12µJ (off)
  • Input Type : Standard
  • Gate Charge : 12nC
  • Td (on/off) @ 25°C : 11ns/60ns
  • Test Condition : 400V, 1.5A, 100Ohm, 15V
  • Reverse Recovery Time (trr) : 85ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-220-3
  • Supplier Device Package : TO-220
4540
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IKW40N120T2FKSA1
Infineon Technologies
Transistors-IGBTs - Single
IGBT 1200V 75A 480W TO247-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchStop®
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 75A
  • Current - Collector Pulsed (Icm) : 160A
  • Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 40A
  • Power - Max : 480W
  • Switching Energy : 5.25mJ
  • Input Type : Standard
  • Gate Charge : 192nC
  • Td (on/off) @ 25°C : 33ns/314ns
  • Test Condition : 600V, 40A, 12Ohm, 15V
  • Reverse Recovery Time (trr) : 258ns
  • Operating Temperature : -40°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : PG-TO247-3
2751
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BSM50GD120DN2_B10
Infineon Technologies
Transistors-IGBTs - Modules
IGBT BSM50GD120DN2GBOSA1
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Configuration : Full Bridge
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 78A
  • Power - Max : 400W
  • Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 50A
  • Input Capacitance (Cies) @ Vce : 33nF @ 25V
  • Input : Standard
  • NTC Thermistor : No
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Chassis Mount
  • Package / Case : Module
  • Supplier Device Package : Module
153
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IRF3205PBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 110A TO-220AB
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 8mOhm @ 62A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 146nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 3247pF @ 25V
  • Power Dissipation (Max) : 200W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
15088
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SI4946BEY-T1-GE3
Vishay Siliconix
Transistors-FETs, MOSFETs - Arrays
MOSFET 2N-CH 60V 6.5A 8-SOIC
  • Manufacturer : Vishay Siliconix
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchFET®
  • FET Type : 2 N-Channel (Dual)
  • FET Feature : Logic Level Gate
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 6.5A
  • Rds On (Max) @ Id, Vgs : 41mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds : 840pF @ 30V
  • Power - Max : 3.7W
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 8-SO
8469
More on Order
BSC123N08NS3GATMA1
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 80V 55A TDSON-8
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : OptiMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 80V
  • Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
  • Rds On (Max) @ Id, Vgs : 12.3mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id : 3.5V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1870pF @ 40V
  • Power Dissipation (Max) : 2.5W (Ta), 66W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PG-TDSON-8-1
  • Package / Case : 8-PowerTDFN
190469
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BSC340N08NS3GATMA1
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 80V 23A TDSON-8
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : OptiMOS™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 80V
  • Current - Continuous Drain (Id) @ 25°C : 7A (Ta), 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
  • Rds On (Max) @ Id, Vgs : 34mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id : 3.5V @ 12µA
  • Gate Charge (Qg) (Max) @ Vgs : 9.1nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 756pF @ 40V
  • Power Dissipation (Max) : 2.5W (Ta), 32W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PG-TDSON-8-5
  • Package / Case : 8-PowerTDFN
43293
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FQD13N10LTM
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 10A DPAK
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : QFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
  • Rds On (Max) @ Id, Vgs : 180mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id : 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 12nC @ 5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
  • Power Dissipation (Max) : 2.5W (Ta), 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : D-Pak
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
441
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AO3401AL_101
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 30V SOT23
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
  • Rds On (Max) @ Id, Vgs : 44mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id : 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 12.2nC @ 4.5V
  • Vgs (Max) : ±12V
  • Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 15V
  • Power Dissipation (Max) : 1.4W (Ta)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SOT-23-3
  • Package / Case : TO-236-3, SC-59, SOT-23-3
246
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AO3400A_101
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V SOT23
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
324
More on Order
IPD60R800CEATMA1
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 600V TO-252-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : CoolMOS™ CE
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 800mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id : 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs : 17.2nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 373pF @ 100V
  • Power Dissipation (Max) : 48W (Tc)
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252-3
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
149
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IRFP150N
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 42A TO-247AC
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 36mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 25V
  • Power Dissipation (Max) : 160W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-247AC
  • Package / Case : TO-247-3
249
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RRH100P03GZETB
Rohm Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 30V 10A SOP8
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
  • Rds On (Max) @ Id, Vgs : 12.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 3600pF @ 10V
  • Power Dissipation (Max) : 650mW (Ta)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-SOP
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
4391
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AO4614B
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Arrays
MOSFET N/P-CH 40V 6A/5A 8SOIC
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N and P-Channel
  • FET Feature : Logic Level Gate
  • Drain to Source Voltage (Vdss) : 40V
  • Current - Continuous Drain (Id) @ 25°C : 6A, 5A
  • Rds On (Max) @ Id, Vgs : 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 20V
  • Power - Max : 2W
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package : 8-SO
344
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IRF4905PBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 55V 74A TO-220AB
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 20mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 3400pF @ 25V
  • Power Dissipation (Max) : 200W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
62590
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SISS26LDN-T1-GE3
Vishay Siliconix
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 81.2A PP 1212-8S
  • Manufacturer : Vishay Siliconix
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchFET® Gen IV
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 23.7A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 4.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1980pF @ 30V
  • Power Dissipation (Max) : 4.8W (Ta), 57W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PowerPAK® 1212-8S
  • Package / Case : PowerPAK® 1212-8S
139
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RSR010N10TL
Rohm Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 1.0A TSMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
  • Rds On (Max) @ Id, Vgs : 520mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id : 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
  • Power Dissipation (Max) : 540mW (Ta)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TSMT3
  • Package / Case : SC-96
9101
More on Order
FSB560A
ON Semiconductor
Transistors-Bipolar (BJT) - Single
TRANS NPN 60V 2A SSOT-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Current - Collector (Ic) (Max) : 2A
  • Voltage - Collector Emitter Breakdown (Max) : 60V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 500mA, 2V
  • Power - Max : 500mW
  • Frequency - Transition : 75MHz
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : 3-SSOT
24688
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TK2P60D(TE16L1,NQ)
Toshiba Semiconductor and Storage
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 600V 2A PW-MOLD
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : π-MOSVII
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 4.3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id : 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V
  • Power Dissipation (Max) : 60W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : PW-MOLD
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
304
More on Order
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