Bipolar (BJT) - Arrays, Pre-Biased

Showing 221-240 of 1,584 items.
ImagePart NumberDescriptionIn StockQuantity
PUMD2/DG/B3,135
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA
  • Frequency - Transition : 230MHz, 180MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
219
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PUMD2/DG/B3,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA
  • Frequency - Transition : 230MHz, 180MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
327
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PUMD16/ZLX
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
121
More on Order
PUMD12/DG/B3,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Frequency - Transition : 230MHz, 180MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
344
More on Order
PUMB2/DG/B3,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Frequency - Transition : 180MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
348
More on Order
PUMB1/DG/B3,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS RET SC-88
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA
  • Frequency - Transition : 180MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SOT-363
436
More on Order
PUMD6/ZLX
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP 50V 6TSSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : 6-TSSOP
321
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PUMD6/ZLF
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP 50V 6TSSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : 6-TSSOP
263
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PUMF12,115
Nexperia
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN PREBIAS/PNP 6TSSOP
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V / 120 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) : 1µA
  • Frequency - Transition : 100MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : 6-TSSOP
120
More on Order
RN4902,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
174
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RN4901,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz, 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
397
More on Order
RN2904,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
157
More on Order
RN2903,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
350
More on Order
RN2902,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2PNP PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
284
More on Order
RN1907,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
304
More on Order
RN1906,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
303
More on Order
RN1905,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.2W US6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 500nA
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
387
More on Order
NSVB124XPDXV6T1G
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS PREBIAS NPN/PNP SOT563
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22kOhms
  • Resistor - Emitter Base (R2) : 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : SOT-563
364
More on Order
RN1501(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS 2NPN PREBIAS 0.3W SMV
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7kOhms
  • Resistor - Emitter Base (R2) : 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-74A, SOT-753
  • Supplier Device Package : SMV
434
More on Order
RN4902FE(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays, Pre-Biased
TRANS NPN/PNP PREBIAS 0.1W ES6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10kOhms
  • Resistor - Emitter Base (R2) : 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 100mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-563, SOT-666
  • Supplier Device Package : ES6
391
More on Order
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