Bipolar (BJT) - Arrays

Showing 21-40 of 1,421 items.
ImagePart NumberDescriptionIn StockQuantity
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays
TRANS 2NPN 120V 0.1A SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 120V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
  • Power - Max : 300mW
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
352
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HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays
TRANS 2NPN 120V 0.1A SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 120V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
  • Power - Max : 300mW
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
155
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HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays
TRANS 2PNP 120V 0.1A SM6
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP (Dual)
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 120V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
  • Power - Max : 300mW
  • Frequency - Transition : 100MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SM6
443
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HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - Arrays
TRANS 2PNP 50V 0.15A US6-PLN
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP (Dual)
  • Current - Collector (Ic) (Max) : 150mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
  • Power - Max : 200mW
  • Frequency - Transition : 80MHz
  • Operating Temperature : 125°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : US6
348
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STA421A
Sanken
Transistors-Bipolar (BJT) - Arrays
TRANS 4PNP 60V 3A 10-SIP
  • Manufacturer : Sanken
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 4 PNP (Quad)
  • Current - Collector (Ic) (Max) : 3A
  • Voltage - Collector Emitter Breakdown (Max) : 60V
  • Vce Saturation (Max) @ Ib, Ic : 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max) : 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 1A, 4V
  • Power - Max : 4W
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : 10-SIP
  • Supplier Device Package : 10-SIP
323
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QSZ3TR
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS NPN/PNP 12V 3A 5TSMT
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max) : 3A
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 30mA, 1.5A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 270 @ 500mA, 2V
  • Power - Max : 500mW
  • Frequency - Transition : 280MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package : TSMT5
227
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IMT17T208
Rohm Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS 2PNP 50V 0.5A 6SMT
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP (Dual)
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 3V
  • Power - Max : 300mW
  • Frequency - Transition : 200MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : SMT6
437
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SG2823J-DESC
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 8NPN DARL 95V 0.5A 18DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 8 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 95V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : 18-CDIP
140
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SG2823J-883B
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 8NPN DARL 95V 0.5A 18DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 8 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 95V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : 18-CDIP
438
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SG2823J
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 8NPN DARL 95V 0.5A 18DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 8 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 95V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : 18-CDIP
322
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SG2803J-DESC
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 8NPN DARL 50V 0.5A 18DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 8 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : -55°C ~ 125°C (TA)
  • Mounting Type : Through Hole
  • Supplier Device Package : 18-CDIP
349
More on Order
SG2803J-883B
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 8NPN DARL 50V 0.5A 18DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 8 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : -55°C ~ 125°C (TA)
  • Mounting Type : Through Hole
  • Supplier Device Package : 18-CDIP
111
More on Order
SG2023J-DESC
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 7NPN DARL 95V 0.5A 16DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 95V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package : 16-CDIP
488
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SG2003J-JAN
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 7NPN DARL 50V 0.5A 16DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package : 16-CDIP
358
More on Order
SG2003J-883B
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 7NPN DARL 50V 0.5A 16DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package : 16-CDIP
329
More on Order
SG2003J
Microsemi
Transistors-Bipolar (BJT) - Arrays
TRANS 7NPN DARL 50V 0.5A 16DIP
  • Manufacturer : Microsemi
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 7 NPN Darlington
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package : 16-CDIP
284
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ECH8503-TL-H
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS 2PNP 50V 5A 8ECH
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 PNP (Dual)
  • Current - Collector (Ic) (Max) : 5A
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Vce Saturation (Max) @ Ib, Ic : 190mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 500mA, 2V
  • Power - Max : 1.6W
  • Frequency - Transition : 280MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-SMD, Flat Lead
  • Supplier Device Package : 8-ECH
449
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CPH6539-TL-H
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS 2NPN 30V 1.5A 6CPH
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN (Dual)
  • Current - Collector (Ic) (Max) : 1.5A
  • Voltage - Collector Emitter Breakdown (Max) : 30V
  • Vce Saturation (Max) @ Ib, Ic : 250mV @ 15mA, 750mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 2V
  • Power - Max : 1.2W
  • Frequency - Transition : 500MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : 6-CPH
225
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CPH6538-TL-H
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS 2NPN 30V 0.7A 6CPH
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN (Dual)
  • Current - Collector (Ic) (Max) : 700mA
  • Voltage - Collector Emitter Breakdown (Max) : 30V
  • Vce Saturation (Max) @ Ib, Ic : 190mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 50mA, 2V
  • Power - Max : 600mW
  • Frequency - Transition : 540MHz
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-74, SOT-457
  • Supplier Device Package : 6-CPH
269
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BC847S
ON Semiconductor
Transistors-Bipolar (BJT) - Arrays
TRANS 2NPN 45V 0.2A SC70-6
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : 2 NPN (Dual)
  • Current - Collector (Ic) (Max) : 200mA
  • Voltage - Collector Emitter Breakdown (Max) : 45V
  • Vce Saturation (Max) @ Ib, Ic : 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max) : 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 110 @ 2mA, 5V
  • Power - Max : 300mW
  • Frequency - Transition : 200MHz
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package : SC-88 (SC-70-6)
119
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