| BFQ19SH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 15V 5.5GHZ SOT89-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 15V
- Frequency - Transition : 5.5GHz
- Noise Figure (dB Typ @ f) : 3dB @ 1.8GHz
- Gain : 7dB
- Power - Max : 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 70mA, 8V
- Current - Collector (Ic) (Max) : 120mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-243AA
- Supplier Device Package : SOT-89-3
| 140 More on Order |
|
| BFP640ESDH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 4.7V 46GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 4.7V
- Frequency - Transition : 46GHz
- Noise Figure (dB Typ @ f) : 0.6dB ~ 2dB @ 150MHz ~ 10GHz
- Gain : 7dB ~ 30dB
- Power - Max : 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 110 @ 30mA, 3V
- Current - Collector (Ic) (Max) : 50mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 450 More on Order |
|
| BFR840L3RHESDE6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 2.6V 75GHZ TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 2.6V
- Frequency - Transition : 75GHz
- Noise Figure (dB Typ @ f) : 0.5dB @ 450MHz
- Gain : 27dB
- Power - Max : 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max) : 35mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3
| 488 More on Order |
|
| BFP720ESDH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 4.7V 43GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 4.7V
- Frequency - Transition : 43GHz
- Noise Figure (dB Typ @ f) : 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
- Gain : 11dB ~ 30.5dB
- Power - Max : 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 15mA, 3V
- Current - Collector (Ic) (Max) : 30mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 392 More on Order |
|
| BFP620FH7764XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 2.8V 65GHZ 4TSFP - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 2.8V
- Frequency - Transition : 65GHz
- Noise Figure (dB Typ @ f) : 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain : 21dB ~ 10dB
- Power - Max : 185mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 110 @ 50mA, 1.5V
- Current - Collector (Ic) (Max) : 80mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : 4-SMD, Flat Leads
- Supplier Device Package : 4-TSFP
| 464 More on Order |
|
| BFP720H6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 4.7V
- Frequency - Transition : 45GHz
- Noise Figure (dB Typ @ f) : 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
- Gain : 10.5dB ~ 28.5dB
- Power - Max : 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 13mA, 3V
- Current - Collector (Ic) (Max) : 25mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 127 More on Order |
|
| BFP740H6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 4.7V
- Frequency - Transition : 42GHz
- Noise Figure (dB Typ @ f) : 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
- Gain : 27dB
- Power - Max : 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 25mA, 3V
- Current - Collector (Ic) (Max) : 30mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 359 More on Order |
|
| BFP840ESDH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 2.25V 80GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 2.25V
- Frequency - Transition : 80GHz
- Noise Figure (dB Typ @ f) : 0.85dB @ 5.5GHz
- Gain : 18.5dB
- Power - Max : 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max) : 35mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 214 More on Order |
|
| BFP842ESDH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 3.7V 60GHZ SOT343 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 3.7V
- Frequency - Transition : 60GHz
- Noise Figure (dB Typ @ f) : 0.65dB @ 3.5GHz
- Gain : 26dB
- Power - Max : 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 15mA, 2.5V
- Current - Collector (Ic) (Max) : 40mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : SOT-343
| 436 More on Order |
|
| BFP520H6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ SOT343-4 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 3.5V
- Frequency - Transition : 45GHz
- Noise Figure (dB Typ @ f) : 0.95dB @ 1.8GHz
- Gain : 22.5dB
- Power - Max : 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 20mA, 2V
- Current - Collector (Ic) (Max) : 40mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : PG-SOT343-4
| 230 More on Order |
|
| BFR193L3E6327XTMA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ TSLP-3-1 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 8GHz
- Noise Figure (dB Typ @ f) : 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain : 12.5dB ~ 19dB
- Power - Max : 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
- Current - Collector (Ic) (Max) : 80mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-1
| 115 More on Order |
|
| BFP181E7764HTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143-4 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 8GHz
- Noise Figure (dB Typ @ f) : 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain : 17.5dB ~ 21dB
- Power - Max : 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 70mA, 8V
- Current - Collector (Ic) (Max) : 20mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-253-4, TO-253AA
- Supplier Device Package : PG-SOT143-4
| 252 More on Order |
|
| BFR460L3E6327XTMA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ TSLP-3-1 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 5.8V
- Frequency - Transition : 22GHz
- Noise Figure (dB Typ @ f) : 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
- Gain : 16dB
- Power - Max : 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 90 @ 20mA, 3V
- Current - Collector (Ic) (Max) : 50mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-1
| 243 More on Order |
|
| BFP193WH6327XTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 8GHz
- Noise Figure (dB Typ @ f) : 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain : 13.5dB ~ 20.5dB
- Power - Max : 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
- Current - Collector (Ic) (Max) : 80mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SC-82A, SOT-343
- Supplier Device Package : PG-SOT343-4
| 241 More on Order |
|
| BFP 182 E7764 Infineon Technologies | Transistors-Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143-4 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 8GHz
- Noise Figure (dB Typ @ f) : 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Gain : 22dB
- Power - Max : 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 8V
- Current - Collector (Ic) (Max) : 35mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-253-4, TO-253AA
- Supplier Device Package : PG-SOT143-4
| 298 More on Order |
|
| HFA3102BZ Renesas Electronics America Inc. | Transistors-Bipolar (BJT) - RF RF TRANS 6 NPN 12V 10GHZ 14SOIC - Manufacturer : Renesas Electronics America Inc.
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 6 NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 10GHz
- Noise Figure (dB Typ @ f) : 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
- Gain : 12.4dB ~ 17.5dB
- Power - Max : 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 10mA, 3V
- Current - Collector (Ic) (Max) : 30mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package : 14-SOIC
| 171 More on Order |
|
| HFA3134IHZ96 Renesas Electronics America Inc. | Transistors-Bipolar (BJT) - RF RF TRANS 2 NPN 9V 8.5GHZ SOT23-6 - Manufacturer : Renesas Electronics America Inc.
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max) : 9V
- Frequency - Transition : 8.5GHz
- Noise Figure (dB Typ @ f) : 2.4dB @ 1GHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 48 @ 10mA, 2V
- Current - Collector (Ic) (Max) : 26mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SOT-23-6
- Supplier Device Package : SOT-23-6
| 207 More on Order |
|
| HFA3102BZ96 Renesas Electronics America Inc. | Transistors-Bipolar (BJT) - RF RF TRANS 6 NPN 12V 10GHZ 14SOIC - Manufacturer : Renesas Electronics America Inc.
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 6 NPN
- Voltage - Collector Emitter Breakdown (Max) : 12V
- Frequency - Transition : 10GHz
- Noise Figure (dB Typ @ f) : 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
- Gain : 12.4dB ~ 17.5dB
- Power - Max : 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 10mA, 3V
- Current - Collector (Ic) (Max) : 30mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package : 14-SOIC
| 106 More on Order |
|
| BFG35,115 NXP | Transistors-Bipolar (BJT) - RF RF TRANS NPN 18V 4GHZ SOT223 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 18V
- Frequency - Transition : 4GHz
- Power - Max : 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce : 25 @ 100mA, 10V
- Current - Collector (Ic) (Max) : 150mA
- Operating Temperature : 175°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-261-4, TO-261AA
- Supplier Device Package : SOT-223
| 1979 More on Order |
|
| MT3S113P(TE12L,F) Toshiba Semiconductor and Storage | Transistors-Bipolar (BJT) - RF RF TRANS NPN 5.3V 7.7GHZ PW-MINI - Manufacturer : Toshiba Semiconductor and Storage
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 5.3V
- Frequency - Transition : 7.7GHz
- Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
- Gain : 10.5dB
- Power - Max : 1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
- Current - Collector (Ic) (Max) : 100mA
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-243AA
- Supplier Device Package : PW-MINI
| 1851 More on Order |
|