Bipolar (BJT) - RF

Showing 1,461-1,480 of 1,494 items.
ImagePart NumberDescriptionIn StockQuantity
BFU550XAR
NXP
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 11GHZ SOT143B
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : Automotive, AEC-Q101
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 11GHz
  • Noise Figure (dB Typ @ f) : 0.75db @ 900MHz
  • Gain : 21.5dB
  • Power - Max : 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max) : 50mA
  • Operating Temperature : -40°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount, Gull Wing
  • Package / Case : TO-253-4, TO-253AA
  • Supplier Device Package : SOT-143B
29906
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BFP640FH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 4.5V 40GHZ 4TSFP
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 4.5V
  • Frequency - Transition : 40GHz
  • Noise Figure (dB Typ @ f) : 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain : 23dB
  • Power - Max : 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max) : 50mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 4-SMD, Flat Leads
  • Supplier Device Package : 4-TSFP
229
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BFU730F,115
NXP
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 2.8V 55GHZ 4DFP
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 2.8V
  • Frequency - Transition : 55GHz
  • Noise Figure (dB Typ @ f) : 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
  • Power - Max : 197mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 205 @ 2mA, 2V
  • Current - Collector (Ic) (Max) : 30mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SOT-343F
  • Supplier Device Package : 4-DFP
9447
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BFP420H6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 5V 25GHZ SOT343
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 5V
  • Frequency - Transition : 25GHz
  • Noise Figure (dB Typ @ f) : 1.1dB @ 1.8GHz
  • Gain : 21dB
  • Power - Max : 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max) : 35mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : SOT-343
115252
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BFP405H6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 5V 25GHZ SOT343
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 5V
  • Frequency - Transition : 25GHz
  • Noise Figure (dB Typ @ f) : 1.25dB @ 1.8GHz
  • Gain : 23dB
  • Power - Max : 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max) : 25mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : SOT-343
9030
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BFS17NTA
Diodes Incorporated
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 11V 3.2GHZ SOT23-3
  • Manufacturer : Diodes Incorporated
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 11V
  • Frequency - Transition : 3.2GHz
  • Power - Max : 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max) : 50mA
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
4329
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BFP460H6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 5.8V 22GHZ SOT343-4
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 5.8V
  • Frequency - Transition : 22GHz
  • Noise Figure (dB Typ @ f) : 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
  • Gain : 12.5dB ~ 26.5dB
  • Power - Max : 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max) : 70mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : PG-SOT343-4
4743
More on Order
BFP420FH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 5.5V 25GHZ 4TSFP
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 5.5V
  • Frequency - Transition : 25GHz
  • Noise Figure (dB Typ @ f) : 1.1dB @ 1.8GHz
  • Gain : 19.5dB
  • Power - Max : 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max) : 35mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 4-SMD, Flat Leads
  • Supplier Device Package : 4-TSFP
14220
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BFR106E6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 15V 5GHZ SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 15V
  • Frequency - Transition : 5GHz
  • Noise Figure (dB Typ @ f) : 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
  • Gain : 8.5dB ~ 13dB
  • Power - Max : 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max) : 210mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
34926
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BFR93AWH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 6GHZ SOT323-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 6GHz
  • Noise Figure (dB Typ @ f) : 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain : 10.5dB ~ 15.5dB
  • Power - Max : 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max) : 90mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : PG-SOT323-3
18744
More on Order
BFR93AE6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 6GHZ SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 6GHz
  • Noise Figure (dB Typ @ f) : 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain : 9.5dB ~ 14.5dB
  • Power - Max : 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max) : 90mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
48853
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BFR182E6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8GHZ SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8GHz
  • Noise Figure (dB Typ @ f) : 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain : 12dB ~ 18dB
  • Power - Max : 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max) : 35mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
4168
More on Order
BFP183WH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8.5GHZ SOT343-4
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8.5GHz
  • Noise Figure (dB Typ @ f) : 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain : 22dB
  • Power - Max : 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max) : 65mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : PG-SOT343-4
12279
More on Order
BFR193FH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8GHZ TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8GHz
  • Noise Figure (dB Typ @ f) : 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain : 12.5dB
  • Power - Max : 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max) : 80mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
8980
More on Order
BFP196WNH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 7.5GHZ SOT343-4
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 7.5GHz
  • Noise Figure (dB Typ @ f) : 1.3dB @ 900MHz
  • Gain : 9.7dB
  • Power - Max : 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max) : 150mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : PG-SOT343-4
4080
More on Order
BFR193E6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8GHZ SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8GHz
  • Noise Figure (dB Typ @ f) : 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain : 10dB ~ 15dB
  • Power - Max : 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max) : 80mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
53643
More on Order
BFR183E6327HTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8GHZ SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8GHz
  • Noise Figure (dB Typ @ f) : 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain : 17.5dB
  • Power - Max : 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max) : 65mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
16387
More on Order
BFR193WH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 8GHZ SOT323-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 8GHz
  • Noise Figure (dB Typ @ f) : 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain : 10.5dB ~ 16dB
  • Power - Max : 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max) : 80mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : PG-SOT323-3
29378
More on Order
2SC5066-O,LF
Toshiba Semiconductor and Storage
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 7GHZ SSM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 7GHz
  • Noise Figure (dB Typ @ f) : 1dB @ 500MHz
  • Power - Max : 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
  • Current - Collector (Ic) (Max) : 30mA
  • Operating Temperature : 125°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : SSM
7983
More on Order
BFP196WH6327XTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - RF
RF TRANS NPN 12V 7.5GHZ SOT343-4
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN
  • Voltage - Collector Emitter Breakdown (Max) : 12V
  • Frequency - Transition : 7.5GHz
  • Noise Figure (dB Typ @ f) : 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain : 12.5dB ~ 19dB
  • Power - Max : 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max) : 150mA
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : SC-82A, SOT-343
  • Supplier Device Package : PG-SOT343-4
9405
More on Order
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