| DDTD123YU-7-F Diodes Incorporated | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SOT-323
| 336 More on Order |
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| DDTD123EU-7-F Diodes Incorporated | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 39 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SOT-323
| 279 More on Order |
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| PDTA114EEAF NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW SC-75 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Frequency - Transition : 180MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : SC-75
| 202 More on Order |
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| PDTA143ZK,135 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SMT3; MPAK
| 207 More on Order |
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| PDTC144VS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 190 More on Order |
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| PDTC144VK,115 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SMT3; MPAK
| 291 More on Order |
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| PDTC144VE,115 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : SC-75
| 493 More on Order |
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| PDTC144TS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 215 More on Order |
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| PDTC143ZS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 272 More on Order |
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| PDTC143XS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 112 More on Order |
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| PDTC143TS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 498 More on Order |
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| PDTC124XS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 387 More on Order |
|
| PDTC124TS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 423 More on Order |
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| PDTC123YS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 171 More on Order |
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| PDTC123YK,115 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SMT3; MPAK
| 150 More on Order |
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| PDTC123YE,115 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : SC-75
| 364 More on Order |
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| PDTC123TE,115 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : SC-75
| 260 More on Order |
|
| PDTC123JS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 205 More on Order |
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| PDTC123ES,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 292 More on Order |
|
| PDTC115TS,126 NXP | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 1µA
- Power - Max : 500mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 345 More on Order |
|