Bipolar (BJT) - Single, Pre-Biased

Showing 181-200 of 3,282 items.

Part Number	Description	In Stock
RN1113CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	190 More on Order
RN1112CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	340 More on Order
RN1111CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	328 More on Order
RN1110CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	487 More on Order
RN1109CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	487 More on Order
RN1108CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	364 More on Order
RN1107CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	194 More on Order
RN1106CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	306 More on Order
RN1105CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	149 More on Order
RN1104CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	421 More on Order
RN1103CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	242 More on Order
RN1102CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	211 More on Order
RN1101CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	224 More on Order
FJN3303RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	173 More on Order
RN2313(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : USM	338 More on Order
RN1118(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	130 More on Order
RN1117(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	419 More on Order
RN1112(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	276 More on Order
RN1109(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	466 More on Order
RN1106MFV(TL3,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.15W VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	406 More on Order