Bipolar (BJT) - Single, Pre-Biased

Showing 21-40 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
PDTC115ES,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 20mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100 kOhms
  • Resistor - Emitter Base (R2) : 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
242
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PDTC114YS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
116
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PDTB123YK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
394
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PDTB123EK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
409
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PDTB113ZK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
436
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PDTB113EK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
286
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PDTA144WS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
121
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PDTA144VS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
134
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PDTA144VK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
108
More on Order
PDTA144TS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
389
More on Order
PDTA143ZS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
168
More on Order
PDTA143XS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
156
More on Order
PDTA143TS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
401
More on Order
PDTA124XS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
145
More on Order
PDTA124TS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
291
More on Order
PDTA123YS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
375
More on Order
PDTA123YK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
338
More on Order
PDTA123YE,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 150MW SC75
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 150mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : SC-75
281
More on Order
PDTA123TK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
223
More on Order
PDTA123JS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
464
More on Order
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