| FJY3007R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 391 More on Order |
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| FJY3006R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 498 More on Order |
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| FJY3005R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 240 More on Order |
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| FJY3004R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 280 More on Order |
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| FJY3003R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 181 More on Order |
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| FJY3001R ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT523F - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 22 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-89, SOT-490
- Supplier Device Package : SOT-523F
| 226 More on Order |
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| BCR 569 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 330mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 394 More on Order |
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| BCR 519 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 100MHz
- Power - Max : 330mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 262 More on Order |
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| BCR 512 B6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 100MHz
- Power - Max : 330mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 310 More on Order |
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| BCR 503 B6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 100MHz
- Power - Max : 330mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 454 More on Order |
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| BCR 199T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 316 More on Order |
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| BCR 199L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 386 More on Order |
|
| BCR 199F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 303 More on Order |
|
| BCR198WE6327BTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 190MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 453 More on Order |
|
| BCR 198T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 190MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 220 More on Order |
|
| BCR 198L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 190MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 374 More on Order |
|
| BCR 198F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 190MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 206 More on Order |
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| BCR198B6327HTLA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 190MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 299 More on Order |
|
| BCR196WE6327HTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 162 More on Order |
|
| BCR 196T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 70mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 460 More on Order |
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