| BCR 183L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 383 More on Order |
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| BCR 183F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 440 More on Order |
|
| BCR 183 B6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 488 More on Order |
|
| BCR 179T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 430 More on Order |
|
| BCR 179L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 422 More on Order |
|
| BCR 179F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 186 More on Order |
|
| BCR169WE6327HTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 270 More on Order |
|
| BCR 169T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 427 More on Order |
|
| BCR 169L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 274 More on Order |
|
| BCR 169F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 406 More on Order |
|
| BCR166WE6327HTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 177 More on Order |
|
| BCR 166T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 242 More on Order |
|
| BCR 166L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 455 More on Order |
|
| BCR 166F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 328 More on Order |
|
| BCR166B6327HTLA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 126 More on Order |
|
| BCR 164T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 426 More on Order |
|
| BCR 164L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 378 More on Order |
|
| BCR 164F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 408 More on Order |
|
| BCR 162T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 421 More on Order |
|
| BCR 162L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 372 More on Order |
|