Bipolar (BJT) - Single, Pre-Biased

Showing 581-600 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
BCR 116F E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 150MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
224
More on Order
BCR 114T E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SC75
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 160MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : PG-SC-75
129
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BCR 114L3 E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSLP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 160MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : PG-TSLP-3-4
235
More on Order
BCR 114F E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 160MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
255
More on Order
BCR112WE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SOT323-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : PG-SOT323-3
303
More on Order
BCR 112T E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SC75
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : PG-SC-75
460
More on Order
BCR 112L3 E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSLP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : PG-TSLP-3-4
183
More on Order
BCR 112F E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
137
More on Order
BCR108WE6327BTSA1
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SOT323-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 170MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : PG-SOT323-3
201
More on Order
BCR 108T E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SC75
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 170MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : PG-SC-75
271
More on Order
BCR 108L3 E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSLP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 170MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : PG-TSLP-3-4
138
More on Order
BCR 108F E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 170MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
442
More on Order
BCR 108 B6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 170MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
330
More on Order
BCR 103T E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SC75
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : PG-SC-75
216
More on Order
BCR 103L3 E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSLP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : PG-TSLP-3-4
254
More on Order
BCR 103F E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSFP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 140MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SOT-723
  • Supplier Device Package : PG-TSFP-3
423
More on Order
BCR 101T E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SC75
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100 kOhms
  • Resistor - Emitter Base (R2) : 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 100MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-75, SOT-416
  • Supplier Device Package : PG-SC-75
393
More on Order
BCR 101L3 E6327
Infineon Technologies
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW TSLP-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 50mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 100 kOhms
  • Resistor - Emitter Base (R2) : 100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 100MHz
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-101, SOT-883
  • Supplier Device Package : PG-TSLP-3-4
151
More on Order
DTC323TUT106
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW UMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 15V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : UMT3
104
More on Order
DTC314TUT106
Rohm Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW UMT3
  • Manufacturer : Rohm Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 600mA
  • Voltage - Collector Emitter Breakdown (Max) : 15V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : SC-70, SOT-323
  • Supplier Device Package : UMT3
146
More on Order
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