| BCR 116F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 150MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 224 More on Order |
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| BCR 114T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 129 More on Order |
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| BCR 114L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 235 More on Order |
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| BCR 114F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 160MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 255 More on Order |
|
| BCR112WE6327BTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 303 More on Order |
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| BCR 112T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 460 More on Order |
|
| BCR 112L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 183 More on Order |
|
| BCR 112F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 137 More on Order |
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| BCR108WE6327BTSA1 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT323-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 170MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : PG-SOT323-3
| 201 More on Order |
|
| BCR 108T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 170MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 271 More on Order |
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| BCR 108L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 170MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 138 More on Order |
|
| BCR 108F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 170MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 442 More on Order |
|
| BCR 108 B6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 170MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 330 More on Order |
|
| BCR 103T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 216 More on Order |
|
| BCR 103L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 254 More on Order |
|
| BCR 103F E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSFP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 20mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 140MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SOT-723
- Supplier Device Package : PG-TSFP-3
| 423 More on Order |
|
| BCR 101T E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SC75 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 50mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 100 kOhms
- Resistor - Emitter Base (R2) : 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 100MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-75, SOT-416
- Supplier Device Package : PG-SC-75
| 393 More on Order |
|
| BCR 101L3 E6327 Infineon Technologies | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TSLP-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 50mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 100 kOhms
- Resistor - Emitter Base (R2) : 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 100MHz
- Power - Max : 250mW
- Mounting Type : Surface Mount
- Package / Case : SC-101, SOT-883
- Supplier Device Package : PG-TSLP-3-4
| 151 More on Order |
|
| DTC323TUT106 Rohm Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 600mA
- Voltage - Collector Emitter Breakdown (Max) : 15V
- Resistor - Base (R1) : 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : UMT3
| 104 More on Order |
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| DTC314TUT106 Rohm Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 600mA
- Voltage - Collector Emitter Breakdown (Max) : 15V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : UMT3
| 146 More on Order |
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