| FJX4012RTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SC-70 (SOT323)
| 439 More on Order |
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| FJX4014RTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SC-70 (SOT323)
| 476 More on Order |
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| FJX4010RTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SC-70 (SOT323)
| 225 More on Order |
|
| FJX4001RTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : SC-70, SOT-323
- Supplier Device Package : SC-70 (SOT323)
| 110 More on Order |
|
| FJNS4203RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 185 More on Order |
|
| FJNS4204RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 369 More on Order |
|
| FJNS4201RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 382 More on Order |
|
| FJNS4209RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 302 More on Order |
|
| FJNS4209RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 478 More on Order |
|
| FJNS4211RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 159 More on Order |
|
| FJNS4203RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 425 More on Order |
|
| FJNS4202RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 154 More on Order |
|
| FJNS4206RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 320 More on Order |
|
| FJNS4208RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 446 More on Order |
|
| FJNS4207RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 465 More on Order |
|
| FJNS4204RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 138 More on Order |
|
| FJNS4206RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 172 More on Order |
|
| FJNS4210RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 357 More on Order |
|
| FJNS4213RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 259 More on Order |
|
| FJNS4208RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 497 More on Order |
|