| FJNS4213RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 269 More on Order |
|
| FJNS4212RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 231 More on Order |
|
| FJNS4207RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 356 More on Order |
|
| FJNS4202RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 380 More on Order |
|
| FJNS4211RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 459 More on Order |
|
| FJNS4201RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 163 More on Order |
|
| FJNS4205RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 419 More on Order |
|
| FJNS4205RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 471 More on Order |
|
| FJNS4210RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 137 More on Order |
|
| FJNS4212RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 162 More on Order |
|
| FJNS4214RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 399 More on Order |
|
| FJNS4214RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 227 More on Order |
|
| FJV4110RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 269 More on Order |
|
| FJV4108RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 439 More on Order |
|
| FJV4109RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 399 More on Order |
|
| FJV4105RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 355 More on Order |
|
| FJV4111RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 220 More on Order |
|
| FJV4103RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 500 More on Order |
|
| FJV4107RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 400 More on Order |
|
| FJV4106RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
| 218 More on Order |
|