| FJV4112RMTF ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 200mW
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3
| 100 More on Order |
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| FJNS3205RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 304 More on Order |
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| FJNS3213RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 464 More on Order |
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| FJNS3206RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 127 More on Order |
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| FJNS3207RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 376 More on Order |
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| FJNS3208RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 337 More on Order |
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| FJNS3210RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 241 More on Order |
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| FJNS3212RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 365 More on Order |
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| FJNS3207RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 286 More on Order |
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| FJNS3214RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 457 More on Order |
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| FJNS3203RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 190 More on Order |
|
| FJNS3209RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 138 More on Order |
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| FJNS3211RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 469 More on Order |
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| FJNS3203RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 125 More on Order |
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| FJNS3214RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 222 More on Order |
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| FJNS3204RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 242 More on Order |
|
| FJNS3202RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 391 More on Order |
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| FJNS3201RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 446 More on Order |
|
| FJNS3213RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 105 More on Order |
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| FJNS3201RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92S - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 Short Body
- Supplier Device Package : TO-92S
| 171 More on Order |
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