Bipolar (BJT) - Single, Pre-Biased

Showing 661-680 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
FJV4112RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3
100
More on Order
FJNS3205RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
304
More on Order
FJNS3213RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
464
More on Order
FJNS3206RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
127
More on Order
FJNS3207RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
376
More on Order
FJNS3208RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
337
More on Order
FJNS3210RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
241
More on Order
FJNS3212RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
365
More on Order
FJNS3207RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
286
More on Order
FJNS3214RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
457
More on Order
FJNS3203RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
190
More on Order
FJNS3209RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
138
More on Order
FJNS3211RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
469
More on Order
FJNS3203RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
125
More on Order
FJNS3214RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
222
More on Order
FJNS3204RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
242
More on Order
FJNS3202RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
391
More on Order
FJNS3201RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
446
More on Order
FJNS3213RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
105
More on Order
FJNS3201RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
171
More on Order
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