Bipolar (BJT) - Single, Pre-Biased

Showing 681-700 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
FJNS3205RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
368
More on Order
FJNS3204RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
122
More on Order
FJNS3209RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
373
More on Order
FJNS3212RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
158
More on Order
FJNS3210RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
414
More on Order
FJNS3215RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
291
More on Order
FJNS3202RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
168
More on Order
FJNS3215RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
381
More on Order
FJNS3211RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
120
More on Order
FJNS3206RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
179
More on Order
FJNS3208RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92S
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 Short Body
  • Supplier Device Package : TO-92S
222
More on Order
FJV3108RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
266
More on Order
FJV3107RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
141
More on Order
FJV3109RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
260
More on Order
FJV3111RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
179
More on Order
FJV3112RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
323
More on Order
FJV3106RMTF
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 200MW SOT23-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 200mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SOT-23-3 (TO-236)
325
More on Order
FJN4304RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
217
More on Order
FJN4301RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
439
More on Order
FJN4305RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
277
More on Order
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