Bipolar (BJT) - Single, Pre-Biased

Showing 701-720 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
FJN3306RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
378
More on Order
FJN4306RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
447
More on Order
FJN4307RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
454
More on Order
FJN4303RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
360
More on Order
FJN4304RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
234
More on Order
FJN4306RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
177
More on Order
FJN4313RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
372
More on Order
FJN4310RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
268
More on Order
FJN4308RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
436
More on Order
FJN3302RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
490
More on Order
FJN4307RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 22 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
131
More on Order
FJN4308RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
113
More on Order
FJN4314RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
243
More on Order
FJN4312RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
267
More on Order
FJN4313RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
274
More on Order
FJN4311RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
389
More on Order
FJN3315RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 250MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
467
More on Order
FJN4311RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
473
More on Order
FJN4312RTA
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 40V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
371
More on Order
FJN4302RBU
ON Semiconductor
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 300MW TO92-3
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : PNP - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 10 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 100nA (ICBO)
  • Frequency - Transition : 200MHz
  • Power - Max : 300mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package : TO-92-3
479
More on Order
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