| FJN3306RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 378 More on Order |
|
| FJN4306RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 447 More on Order |
|
| FJN4307RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 454 More on Order |
|
| FJN4303RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 360 More on Order |
|
| FJN4304RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 234 More on Order |
|
| FJN4306RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 177 More on Order |
|
| FJN4313RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 372 More on Order |
|
| FJN4310RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 268 More on Order |
|
| FJN4308RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 436 More on Order |
|
| FJN3302RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 490 More on Order |
|
| FJN4307RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 131 More on Order |
|
| FJN4308RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 113 More on Order |
|
| FJN4314RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 243 More on Order |
|
| FJN4312RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 267 More on Order |
|
| FJN4313RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 274 More on Order |
|
| FJN4311RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 389 More on Order |
|
| FJN3315RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 467 More on Order |
|
| FJN4311RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 473 More on Order |
|
| FJN4312RTA ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package : TO-92-3
| 371 More on Order |
|
| FJN4302RBU ON Semiconductor | Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 200MHz
- Power - Max : 300mW
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
| 479 More on Order |
|