Bipolar (BJT) - Single, Pre-Biased

Showing 721-740 of 3,282 items.

Part Number	Description	In Stock
FJN4310RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	217 More on Order
FJN4309RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	319 More on Order
FJN3304RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	475 More on Order
FJN3305RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	192 More on Order
FJN3315RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	162 More on Order
FJN3309RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	408 More on Order
FJN3304RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	369 More on Order
FJN3303RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	104 More on Order
FJN3307RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	476 More on Order
FJN3310RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	218 More on Order
FJN4314RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	253 More on Order
FJN3306RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	413 More on Order
FJN3314RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	298 More on Order
FJN3313RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	153 More on Order
FJN3310RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	312 More on Order
FJN3311RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	245 More on Order
FJN3312RBU ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package : TO-92-3	293 More on Order
FJN3312RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	369 More on Order
FJN3308RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	305 More on Order
FJN3313RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	169 More on Order