Bipolar (BJT) - Single, Pre-Biased

Showing 61-80 of 3,282 items.
ImagePart NumberDescriptionIn StockQuantity
PDTD123YK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
342
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PDTD123EK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
345
More on Order
PDTD113ZK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
260
More on Order
PDTD113EK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
288
More on Order
PDTC144WS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
191
More on Order
PDTD123YS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
420
More on Order
PDTD123TS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
117
More on Order
PDTD123TK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
436
More on Order
PDTD123ES,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 2.2 kOhms
  • Resistor - Emitter Base (R2) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
403
More on Order
PDTD113ZS,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
426
More on Order
PDTD113ES,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 1 kOhms
  • Resistor - Emitter Base (R2) : 1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
111
More on Order
PDTC323TK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 500mA
  • Voltage - Collector Emitter Breakdown (Max) : 15V
  • Resistor - Base (R1) : 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max) : 500nA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
465
More on Order
PDTC144WK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
399
More on Order
PDTC144TK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
304
More on Order
PDTC144ES,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
365
More on Order
PDTC144EK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 47 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
454
More on Order
PDTC143ZK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
260
More on Order
PDTC143XK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
479
More on Order
PDTC143TK,115
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 250MW SMT3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 250mW
  • Mounting Type : Surface Mount
  • Package / Case : TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package : SMT3; MPAK
239
More on Order
PDTC143ES,126
NXP
Transistors-Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS NPN 500MW TO92-3
  • Manufacturer : NXP
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Transistor Type : NPN - Pre-Biased
  • Current - Collector (Ic) (Max) : 100mA
  • Voltage - Collector Emitter Breakdown (Max) : 50V
  • Resistor - Base (R1) : 4.7 kOhms
  • Resistor - Emitter Base (R2) : 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max) : 1µA
  • Power - Max : 500mW
  • Mounting Type : Through Hole
  • Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package : TO-92-3
216
More on Order
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