Bipolar (BJT) - Single, Pre-Biased

Showing 121-140 of 3,282 items.

Part Number	Description	In Stock
FN4L4M-T1B-A Renesas Electronics America	Transistors-Bipolar (BJT) - Single, Pre-Biased PROGRAM ADAPTER Manufacturer : Renesas Electronics America Warranty : Up to 1 year [Limited-Warranty]* Series : *	322 More on Order
FA4F4M-T1B-A Renesas Electronics America	Transistors-Bipolar (BJT) - Single, Pre-Biased PROGRAM ADAPTER Manufacturer : Renesas Electronics America Warranty : Up to 1 year [Limited-Warranty]* Series : *	212 More on Order
PDTC114EU/MIF Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased RET Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SC-70	326 More on Order
PDTA114EU/MIF Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased RET Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 180MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : SC-70, SOT-323 Supplier Device Package : SC-70	254 More on Order
RN2105MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	186 More on Order
RN2103MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	461 More on Order
PDTC144ET/DG/B2,21 Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS RET TO-236AB Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	394 More on Order
PDTC114ET/DG/B2,21 Nexperia	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS RET TO-236AB Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : TO-236AB	381 More on Order
RN2104MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 500NA VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	156 More on Order
RN1109MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V 500NA VESM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	272 More on Order
RN2107MFV,L3F Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-723 Supplier Device Package : VESM	433 More on Order
RN2402S,LF(D Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W S-MINI Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	209 More on Order
RN1406S,LF(D Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SMINI Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : S-Mini	446 More on Order
BCR505E6778HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 100MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	492 More on Order
BCR503E6393HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 500mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 100MHz Power - Max : 330mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	173 More on Order
BCR198E6393HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 190MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	385 More on Order
BCR192E6785HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	470 More on Order
BCR183E6359HTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	363 More on Order
BCR148E6393HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 100MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	207 More on Order
BCR135E6359HTMA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 150MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	134 More on Order