Bipolar (BJT) - Single, Pre-Biased

Showing 141-160 of 3,282 items.

Part Number	Description	In Stock
BCR133E6393HTSA1 Infineon Technologies	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN SOT23 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 130MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3	343 More on Order
FJV4104RMTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	461 More on Order
FJV4101RMTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	496 More on Order
FJV3103RMTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	110 More on Order
FJN3314RTA ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW TO92-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 300mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3	367 More on Order
PDTC123JE,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SC-75	121 More on Order
FJV4102RMTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	329 More on Order
FJV3115RMTF ON Semiconductor	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236)	127 More on Order
RN2107ACT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	132 More on Order
RN2118(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	368 More on Order
RN2117(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	492 More on Order
RN2106(T5L,F,T) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W SSM Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-75, SOT-416 Supplier Device Package : SSM	129 More on Order
RN2108ACT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	331 More on Order
RN2104ACT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	221 More on Order
RN2102ACT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	387 More on Order
RN2101ACT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 80mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7 kOhms Resistor - Emitter Base (R2) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	173 More on Order
RN2113CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	318 More on Order
RN2112CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	374 More on Order
RN2111CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	112 More on Order
RN2110CT(TPL3) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.05W CST3 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 50mA Voltage - Collector Emitter Breakdown (Max) : 20V Resistor - Base (R1) : 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Power - Max : 50mW Mounting Type : Surface Mount Package / Case : SC-101, SOT-883 Supplier Device Package : CST3	323 More on Order