| BUK7E2R7-30B,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 75A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6212pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 263 More on Order |
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| BUK7E11-55B,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 37nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2604pF @ 25V
- Power Dissipation (Max) : 157W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 377 More on Order |
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| BUK7628-55A,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 42A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101, TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 28mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1165pF @ 25V
- Power Dissipation (Max) : 99W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 462 More on Order |
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| BUK7624-55A,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 47A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101, TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1310pF @ 25V
- Power Dissipation (Max) : 106W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 173 More on Order |
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| BUK76150-55A,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 11A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 5.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 322pF @ 25V
- Power Dissipation (Max) : 36W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 436 More on Order |
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| BUK754R3-40B,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 69nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4824pF @ 25V
- Power Dissipation (Max) : 254W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 455 More on Order |
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| BUK752R7-30B,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6212pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 445 More on Order |
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| BUK7524-55A,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 47A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1310pF @ 25V
- Power Dissipation (Max) : 106W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 400 More on Order |
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| BUK7523-75A,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 53A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 23mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2385pF @ 25V
- Power Dissipation (Max) : 138W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 300 More on Order |
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| BUK75150-55A,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 11A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 5.5nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 322pF @ 25V
- Power Dissipation (Max) : 36W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 309 More on Order |
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| SI9410DY,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id : 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
- Vgs (Max) : ±20V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 386 More on Order |
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| SI4800,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 9A SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id : 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 11.8nC @ 5V
- Vgs (Max) : ±20V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 210 More on Order |
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| SI4420DY,518 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V SOT96-1 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 9mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id : 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
- Vgs (Max) : ±20V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SO
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 217 More on Order |
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| PSMN040-200W,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 50A SOT429 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 40mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 183nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9530pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247-3
- Package / Case : TO-247-3
| 184 More on Order |
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| PSMN020-150W,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 150V 73A SOT429 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 150V
- Current - Continuous Drain (Id) @ 25°C : 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 227nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9537pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247-3
- Package / Case : TO-247-3
| 261 More on Order |
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| PSMN010-55D,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A DPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 10.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 55nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 20V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 265 More on Order |
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| PSMN009-100W,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 100A SOT429 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 214nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247-3
- Package / Case : TO-247-3
| 276 More on Order |
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| PSMN005-55P,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 103nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 6500pF @ 25V
- Power Dissipation (Max) : 230W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 364 More on Order |
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| PSMN005-25D,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 5.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 60nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 3500pF @ 20V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 213 More on Order |
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| PSMN004-55W,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 100A SOT429 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 226nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 13000pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247-3
- Package / Case : TO-247-3
| 229 More on Order |
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