| TSM680P06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 68mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 870pF @ 30V
- Power Dissipation (Max) : 17W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 107 More on Order |
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| TSM480P06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 48mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 22.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 30V
- Power Dissipation (Max) : 66W (Tc)
- Operating Temperature : -50°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 459 More on Order |
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| TSM480P06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 48mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 22.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 30V
- Power Dissipation (Max) : 27W (Tc)
- Operating Temperature : -50°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 156 More on Order |
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| TSM340N06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 34mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 30V
- Power Dissipation (Max) : 66W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 308 More on Order |
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| TSM340N06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 34mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 30V
- Power Dissipation (Max) : 27W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 103 More on Order |
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| TSM230N06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 25V
- Power Dissipation (Max) : 104W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 238 More on Order |
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| TSM230N06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 25V
- Power Dissipation (Max) : 42W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 265 More on Order |
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| TSM22P10CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 140mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
- Vgs (Max) : ±25V
- Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 30V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 129 More on Order |
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| TSM22P10CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 140mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
- Vgs (Max) : ±25V
- Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 30V
- Power Dissipation (Max) : 48W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 425 More on Order |
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| TSM10N60CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 45.8nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1738pF @ 25V
- Power Dissipation (Max) : 166W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 419 More on Order |
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| TSM10N60CZ C0 Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 45.8nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1738pF @ 25V
- Power Dissipation (Max) : 166W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
| 110 More on Order |
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| TSM10N60CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 45.8nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1738pF @ 25V
- Power Dissipation (Max) : 50W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 258 More on Order |
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| TSM10N60CI C0 Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 45.8nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1738pF @ 25V
- Power Dissipation (Max) : 50W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 274 More on Order |
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| TSM2311CX-01 RFG Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 55mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id : 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 9nC @ 4.5V
- Vgs (Max) : ±8V
- Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 6V
- Power Dissipation (Max) : 900mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SOT-23
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 261 More on Order |
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| NVD6495NLT4G ON Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 25A DPAK - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 50mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1.024nF @ 25V
- Power Dissipation (Max) : 83W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK (SINGLE GAUGE)
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 202 More on Order |
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| NVD6416ANLT4G ON Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 19A DPAK - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 74mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1nF @ 25V
- Power Dissipation (Max) : 71W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK (SINGLE GAUGE)
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 206 More on Order |
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| DMS3014SFG-13 Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET N-CH POWERDI3333-8 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 381 More on Order |
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| DMN62D0LFD-13 Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET N-CH SOT23 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 442 More on Order |
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| DMN2500UFB4-7B Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET N-CH SOT23 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 260 More on Order |
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| DMN2400UFB4-7R Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET N-CH SOT23 - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : *
| 233 More on Order |
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