FETs, MOSFETs - Single

Showing 1,041-1,060 of 29,932 items.
ImagePart NumberDescriptionIn StockQuantity
FCA47N60F_SN00171
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH TO-3PN
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : SuperFET™
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 47A
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 73mOhm @ 23.5A, 10V
  • Vgs(th) (Max) @ Id : 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 270nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 8000pF @ 25V
  • Power Dissipation (Max) : 417W
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-3PN
  • Package / Case : TO-3P-3, SC-65-3
497
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FDC655BN_NBNN007
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 6.3A SUPERSOT6
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerTrench®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 6.3A
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 25mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 15V
  • Power Dissipation (Max) : 800mW
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SuperSOT™-6
  • Package / Case : SOT-23-6 Thin, TSOT-23-6
309
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FDS6298_G
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 30V 13A 8SO
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerTrench®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 13A
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 9mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14nC @ 5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1108pF @ 15V
  • Power Dissipation (Max) : 1.2W
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-SO
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
137
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FDS4465_SN00187
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET P-CHANNEL 20V 13.5A 8SO
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerTrench®
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 20V
  • Current - Continuous Drain (Id) @ 25°C : 13.5A
  • Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs : 8.5mOhm @ 13.5A, 4.5V
  • Vgs(th) (Max) @ Id : 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 120nC @ 4.5V
  • Vgs (Max) : ±8V
  • Input Capacitance (Ciss) (Max) @ Vds : 8237pF @ 10V
  • Power Dissipation (Max) : 1.2W
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : 8-SO
  • Package / Case : 8-SOIC (0.154", 3.90mm Width)
464
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TSM8N70CI C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 700V 8A ITO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 700V
  • Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 900mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 2006pF @ 25V
  • Power Dissipation (Max) : 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : ITO-220AB
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
146
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TSM8N50CP ROG
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 500V 7.2A TO252
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 500V
  • Current - Continuous Drain (Id) @ 25°C : 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 850mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 26.6nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 1595pF @ 25V
  • Power Dissipation (Max) : 89W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
484
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TSM8N50CH C5G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 500V 7.2A TO251
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 500V
  • Current - Continuous Drain (Id) @ 25°C : 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 850mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 26.6nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 1595pF @ 25V
  • Power Dissipation (Max) : 89W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-251 (IPAK)
  • Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
118
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TSM7N65ACI C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 650V 7A ITO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 650V
  • Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.45Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 27.8nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 1406pF @ 25V
  • Power Dissipation (Max) : 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : ITO-220AB
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
128
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TSM6NB60CZ C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 6A TO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.6Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id : 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 18.3nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 872pF @ 25V
  • Power Dissipation (Max) : 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220
  • Package / Case : TO-220-3
179
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TSM6NB60CI C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 6A ITO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.6Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id : 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 18.3nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 872pF @ 25V
  • Power Dissipation (Max) : 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : ITO-220AB
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
137
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TSM6N60CP ROG
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 6A TO252
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.25Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 20.7nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 1248pF @ 25V
  • Power Dissipation (Max) : 89W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
267
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TSM6N60CH C5G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 6A TO251
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.25Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 20.7nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 1248pF @ 25V
  • Power Dissipation (Max) : 89W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-251 (IPAK)
  • Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
186
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TSM6N50CP ROG
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 500V 5.6A TO252
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 500V
  • Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.4Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 25V
  • Power Dissipation (Max) : 90W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
191
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TSM6N50CH C5G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 500V 5.6A TO251
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 500V
  • Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.4Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 25V
  • Power Dissipation (Max) : 90W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-251 (IPAK)
  • Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
463
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TSM500N03CP ROG
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 30V 12.5A TO252
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 30V
  • Current - Continuous Drain (Id) @ 25°C : 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
  • Rds On (Max) @ Id, Vgs : 50mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id : 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 7nC @ 4.5V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 25V
  • Power Dissipation (Max) : 12.5W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
148
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TSM4NC60CI C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 4A ITO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 2.5Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 654pF @ 50V
  • Power Dissipation (Max) : 40W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : ITO-220AB
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
382
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TSM4NB60CZ C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CHANNEL 600V 4A TO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 2.5Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id : 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
  • Power Dissipation (Max) : 50W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220
  • Package / Case : TO-220-3
228
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TSM4N70CP ROG
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 700V 3.5A TO252
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 700V
  • Current - Continuous Drain (Id) @ 25°C : 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 3.3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 595pF @ 25V
  • Power Dissipation (Max) : 56W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
229
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TSM4N70CI C0G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 700V 3.5A ITO220
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 700V
  • Current - Continuous Drain (Id) @ 25°C : 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 3.3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 595pF @ 25V
  • Power Dissipation (Max) : 56W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : ITO-220AB
  • Package / Case : TO-220-3 Full Pack, Isolated Tab
484
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TSM4N70CH C5G
Taiwan Semiconductor Corporation
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 700V 3.5A TO251
  • Manufacturer : Taiwan Semiconductor Corporation
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 700V
  • Current - Continuous Drain (Id) @ 25°C : 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 3.3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 595pF @ 25V
  • Power Dissipation (Max) : 56W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-251 (IPAK)
  • Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
134
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