| BUK9213-30A,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 55A DPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 37nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 2852pF @ 25V
- Power Dissipation (Max) : 150W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 241 More on Order |
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| BUK7E4R3-75C,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 100A I2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 142nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 11659pF @ 25V
- Power Dissipation (Max) : 333W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I2PAK
- Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
| 159 More on Order |
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| BUK753R4-30B,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4951pF @ 25V
- Power Dissipation (Max) : 255W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 190 More on Order |
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| BUK7226-75A/C1,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 45A DPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2385pF @ 25V
- Power Dissipation (Max) : 158W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 317 More on Order |
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| PHU97NQ03LT,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 75A I-PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 6.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 11.7nC @ 4.5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1570pF @ 12V
- Power Dissipation (Max) : 107W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I-PAK
- Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
| 445 More on Order |
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| PHU77NQ03T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 75A I-PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 17.1nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 860pF @ 12V
- Power Dissipation (Max) : 107W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I-PAK
- Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
| 272 More on Order |
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| PHD77NQ03T,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 17.1nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 860pF @ 12V
- Power Dissipation (Max) : 107W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : DPAK
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 468 More on Order |
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| PH9030L,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 63A LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 13.3nC @ 4.5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1565pF @ 12V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 278 More on Order |
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| PH1875L,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 45.8A LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 45.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 16.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 33.4nC @ 5V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 25V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 133 More on Order |
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| 2N7002T,215 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
- Power Dissipation (Max) : 830mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : TO-236AB (SOT23)
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 414 More on Order |
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| PHB23NQ10LT,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 23A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 72mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V
- Vgs (Max) : ±15V
- Input Capacitance (Ciss) (Max) @ Vds : 1704pF @ 25V
- Power Dissipation (Max) : 98W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 170 More on Order |
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| PHB119NQ06T,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 75A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 2820pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 275 More on Order |
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| PH9025L,115 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 66A LFPAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 25V
- Current - Continuous Drain (Id) @ 25°C : 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 12.8nC @ 4.5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1414pF @ 30V
- Power Dissipation (Max) : 62.5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : LFPAK56, Power-SO8
- Package / Case : SC-100, SOT-669
| 196 More on Order |
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| PMN50XP,165 NXP | Transistors-FETs, MOSFETs - Single MOSFET P-CH 20V 4.8A 6TSOP - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 60mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id : 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 10nC @ 4.5V
- Vgs (Max) : ±12V
- Input Capacitance (Ciss) (Max) @ Vds : 1020pF @ 20V
- Power Dissipation (Max) : 2.2W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 6-TSOP
- Package / Case : SC-74, SOT-457
| 241 More on Order |
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| 2N7000,126 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 300MA TO-92 - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id : 2V @ 1mA
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
- Power Dissipation (Max) : 830mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-92-3
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
| 112 More on Order |
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| PSMN004-60P,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 75A TO220AB - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Rds On (Max) @ Id, Vgs : 3.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 168nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds : 8300pF @ 25V
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 308 More on Order |
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| PSMN003-30B,118 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 9200pF @ 25V
- Power Dissipation (Max) : 230W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D2PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 132 More on Order |
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| PHX9NQ20T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 5.2A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 959pF @ 25V
- Power Dissipation (Max) : 25W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 176 More on Order |
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| PHX23NQ10T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 13A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 70mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1187pF @ 25V
- Power Dissipation (Max) : 27W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 175 More on Order |
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| PHX18NQ20T,127 NXP | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 8.2A TO220F - Manufacturer : NXP
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchMOS™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 8.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 180mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 25V
- Power Dissipation (Max) : 30W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack, Isolated Tab
| 138 More on Order |
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