Bipolar (BJT) - Arrays, Pre-Biased

Showing 1,401-1,420 of 1,584 items.

Part Number	Description	In Stock
RN2601(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SM6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : SM6	3950 More on Order
NSTB60BDW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.25W SC88 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 150mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 120 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 140MHz Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	4834 More on Order
MUN5116DW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	15163 More on Order
PRMH9Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMH9/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	8898 More on Order
PRMH2Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMH2/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	6639 More on Order
PRMD3Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMD3/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	7661 More on Order
PRMD16Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMD16/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 22kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	7499 More on Order
PRMD13Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMD13/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	7571 More on Order
PRMD12Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMD12/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	8832 More on Order
PRMD10Z Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased PRMD10/SOT1268/DFN1412-6 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Series : Automotive, AEC-Q101 Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA Frequency - Transition : 230MHz Power - Max : 480mW Mounting Type : Surface Mount Package / Case : 6-XFDFN Exposed Pad Supplier Device Package : DFN1412-6	7710 More on Order
MUN5335DW1T2G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.25W SC88 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	8152 More on Order
MUN5115DW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	7621 More on Order
MUN5311DW1T2G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	17059 More on Order
MUN5336DW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PMP BRT SC70-6 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 100kOhms Resistor - Emitter Base (R2) : 100kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	24974 More on Order
NSVMUN5333DW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	41228 More on Order
RN1904FE,LF(CT Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : ES6	4751 More on Order
RN1902FE,LF(CT Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 250MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : ES6	5364 More on Order
PUMD10,135 Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 300mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : 6-TSSOP	12211 More on Order
MUN5330DW1T1G ON Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT363 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1kOhms Resistor - Emitter Base (R2) : 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SC-88/SC70-6/SOT-363	3899 More on Order
RN2506(TE85L,F) Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SMV Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 100nA (ICBO) Frequency - Transition : 200MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SC-74A, SOT-753 Supplier Device Package : SMV	4234 More on Order