RN2506(TE85L,F)
| Part Number | RN2506(TE85L,F) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | TRANS 2PNP PREBIAS 0.3W SMV |
RN2506(TE85L,F) Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | RN2506(TE85L,F) PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - Arrays, Pre-Biased |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74A, SOT-753 |
| Supplier Device Package | SMV |
Quick Inquiry
| In Stock | 4234 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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