RN2506(TE85L,F)

Part Number
RN2506(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors
Description
TRANS 2PNP PREBIAS 0.3W SMV
RN2506(TE85L,F) Specifications
RoHS No RoHS Information
EDA/CAD Models RN2506(TE85L,F) PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Toshiba Semiconductor and Storage
Product Line Semiconductors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Series -
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
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