| FDB075N15A_SN00284 ON Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET N-CH 150V - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 150V
- Current - Continuous Drain (Id) @ 25°C : 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 7350pF @ 75V
- Power Dissipation (Max) : 333W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D²PAK (TO-263)
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 105 More on Order |
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| NDS9407_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 150mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 732pF @ 30V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SOIC
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 194 More on Order |
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| FQPF5N60C_F105 ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : QFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 2.5Ohm @ 2.25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V
- Power Dissipation (Max) : 33W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack
| 294 More on Order |
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| FDS8870_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 4.2mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 112nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4615pF @ 15V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SOIC
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
| 219 More on Order |
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| FDN5618P_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 1.25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 170mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 13.8nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 430pF @ 30V
- Power Dissipation (Max) : 500mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SuperSOT-3
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 461 More on Order |
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| FDN338P_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 115mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id : 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
- Vgs (Max) : ±8V
- Input Capacitance (Ciss) (Max) @ Vds : 451pF @ 10V
- Power Dissipation (Max) : 500mW (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : SuperSOT-3
- Package / Case : TO-236-3, SC-59, SOT-23-3
| 295 More on Order |
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| FDMS0306S ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
| 326 More on Order |
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| FDMC7692_F126 ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 13.3A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 8.5mOhm @ 13.3A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 15V
- Power Dissipation (Max) : 2.3W (Ta), 29W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-MLP (3.3x3.3)
- Package / Case : 8-PowerWDFN
| 165 More on Order |
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| FDD24AN06LA0_SB82179 ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 7.1A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
- Rds On (Max) @ Id, Vgs : 19mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id : 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 21nC @ 5V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 25V
- Power Dissipation (Max) : 75W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : TO-252AA
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 366 More on Order |
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| FDB3632_SB82115 ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
- Rds On (Max) @ Id, Vgs : 9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 6000pF @ 25V
- Power Dissipation (Max) : 310W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D²PAK (TO-263AB)
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| 263 More on Order |
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| FCPF11N65_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
| 281 More on Order |
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| FCPF11N60_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : SuperFET™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id : 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1490pF @ 25V
- Power Dissipation (Max) : 36W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack
| 393 More on Order |
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| FCP20N60_G ON Semiconductor | Transistors-FETs, MOSFETs - Single INTEGRATED CIRCUIT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : SuperFET™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 98nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 3080pF @ 25V
- Power Dissipation (Max) : 208W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220-3
- Package / Case : TO-220-3
| 413 More on Order |
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| FQPF13N50C_F105 ON Semiconductor | Transistors-FETs, MOSFETs - Single IC POWER MANAGEMENT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : QFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 500V
- Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 480mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 2055pF @ 25V
- Power Dissipation (Max) : 48W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack
| 352 More on Order |
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| FQPF10N60C_F105 ON Semiconductor | Transistors-FETs, MOSFETs - Single IC POWER MANAGEMENT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : QFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 730mOhm @ 4.75A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 57nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 2040pF @ 25V
- Power Dissipation (Max) : 50W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220F
- Package / Case : TO-220-3 Full Pack
| 318 More on Order |
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| FQP13N50C_F105 ON Semiconductor | Transistors-FETs, MOSFETs - Single IC POWER MANAGEMENT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : QFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 500V
- Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 480mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 2055pF @ 25V
- Power Dissipation (Max) : 195W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220-3
- Package / Case : TO-220-3
| 448 More on Order |
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| FDMC7672_F125 ON Semiconductor | Transistors-FETs, MOSFETs - Single IC POWER MANAGEMENT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®, SyncFET™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 16.9A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 5.7mOhm @ 16.9A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 57nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3890pF @ 15V
- Power Dissipation (Max) : 2.3W (Ta), 33W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-MLP (3.3x3.3)
- Package / Case : 8-PowerWDFN
| 401 More on Order |
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| FDMC6683PZ ON Semiconductor | Transistors-FETs, MOSFETs - Single IC POWER MANAGEMENT - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Vgs(th) (Max) @ Id : 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
- Vgs (Max) : ±12V
- Input Capacitance (Ciss) (Max) @ Vds : 7995pF @ 10V
- Power Dissipation (Max) : 26W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-MLP (3.3x3.3)
| 177 More on Order |
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| SIS612EDNT-T1-GE3 Vishay Siliconix | Transistors-FETs, MOSFETs - Single MOSFET N-CH 20V 50A SMT - Manufacturer : Vishay Siliconix
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs : 3.9mOhm @ 14A, 4.5V
- Vgs(th) (Max) @ Id : 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
- Vgs (Max) : ±12V
- Input Capacitance (Ciss) (Max) @ Vds : 2060pF @ 10V
- Power Dissipation (Max) : 3.7W (Ta), 52W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : PowerPAK® 1212-8S (3.3x3.3)
- Package / Case : PowerPAK® 1212-8S
| 187 More on Order |
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| AUIRLR024ZTRL Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N CH 55V 16A DPAK - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 58mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 9.9nC @ 5V
- Vgs (Max) : ±16V
- Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V
- Power Dissipation (Max) : 35W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : D-Pak
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
| 440 More on Order |
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