| RoHS |
No RoHS Information
|
| EDA/CAD Models |
SIS612EDNT-T1-GE3 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Vishay Siliconix |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Single |
| Series |
TrenchFET® |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs |
3.9mOhm @ 14A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
2060pF @ 10V |
| FET Feature |
- |
| Power Dissipation (Max) |
3.7W (Ta), 52W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® 1212-8S (3.3x3.3) |
| Package / Case |
PowerPAK® 1212-8S |
