IGBTs - Single

Showing 701-720 of 3,307 items.
ImagePart NumberDescriptionIn StockQuantity
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
Transistors-IGBTs - Single
IGBT 400V 600MW 8TSSOP
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 400V
  • Current - Collector Pulsed (Icm) : 150A
  • Vce(on) (Max) @ Vge, Ic : 2.9V @ 4V, 150A
  • Power - Max : 600mW
  • Input Type : Standard
  • Td (on/off) @ 25°C : 1.7µs/2µs
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package : 8-TSSOP
272
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GT60N321(Q)
Toshiba Semiconductor and Storage
Transistors-IGBTs - Single
IGBT 1000V 60A 170W TO3P LH
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 1000V
  • Current - Collector (Ic) (Max) : 60A
  • Current - Collector Pulsed (Icm) : 120A
  • Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
  • Power - Max : 170W
  • Input Type : Standard
  • Td (on/off) @ 25°C : 330ns/700ns
  • Reverse Recovery Time (trr) : 2.5µs
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-3PL
  • Supplier Device Package : TO-3P(LH)
403
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GT10J312(Q)
Toshiba Semiconductor and Storage
Transistors-IGBTs - Single
IGBT 600V 10A 60W TO220SM
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 10A
  • Current - Collector Pulsed (Icm) : 20A
  • Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
  • Power - Max : 60W
  • Input Type : Standard
  • Td (on/off) @ 25°C : 400ns/400ns
  • Test Condition : 300V, 10A, 100Ohm, 15V
  • Reverse Recovery Time (trr) : 200ns
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package : TO-220SM
435
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GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage
Transistors-IGBTs - Single
IGBT 400V 1W 8-SOIC
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 400V
  • Current - Collector Pulsed (Icm) : 200A
  • Vce(on) (Max) @ Vge, Ic : 2.3V @ 4V, 200A
  • Power - Max : 1W
  • Input Type : Standard
  • Td (on/off) @ 25°C : 3.1µs/2µs
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package : 8-SOP (5.5x6.0)
335
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FGA50N100BNTTU
ON Semiconductor
Transistors-IGBTs - Single
IGBT 1000V 50A 156W TO3P
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max) : 1000V
  • Current - Collector (Ic) (Max) : 50A
  • Current - Collector Pulsed (Icm) : 200A
  • Vce(on) (Max) @ Vge, Ic : 2.9V @ 15V, 60A
  • Power - Max : 156W
  • Input Type : Standard
  • Gate Charge : 257nC
  • Td (on/off) @ 25°C : 34ns/243ns
  • Test Condition : 600V, 60A, 10Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-3P-3, SC-65-3
  • Supplier Device Package : TO-3P
431
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STGW45NC60WD
STMicroelectronics
Transistors-IGBTs - Single
IGBT 600V 90A 285W TO247
  • Manufacturer : STMicroelectronics
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerMESH™
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 90A
  • Current - Collector Pulsed (Icm) : 230A
  • Vce(on) (Max) @ Vge, Ic : 2.6V @ 15V, 30A
  • Power - Max : 285W
  • Switching Energy : 302µJ (on), 349µJ (off)
  • Input Type : Standard
  • Gate Charge : 126nC
  • Td (on/off) @ 25°C : 33ns/168ns
  • Test Condition : 390V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 45ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247 Long Leads
468
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STGB18N40LZ-1
STMicroelectronics
Transistors-IGBTs - Single
IGBT 420V 30A 150W I2PAK
  • Manufacturer : STMicroelectronics
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerMESH™
  • Voltage - Collector Emitter Breakdown (Max) : 420V
  • Current - Collector (Ic) (Max) : 30A
  • Current - Collector Pulsed (Icm) : 40A
  • Vce(on) (Max) @ Vge, Ic : 1.7V @ 4.5V, 10A
  • Power - Max : 150W
  • Input Type : Logic
  • Gate Charge : 29nC
  • Td (on/off) @ 25°C : 650ns/13.5µs
  • Test Condition : 300V, 10A, 5V
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package : I2PAK (TO-262)
321
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FGH30N120FTDTU
ON Semiconductor
Transistors-IGBTs - Single
IGBT 1200V 60A 339W TO247
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 60A
  • Current - Collector Pulsed (Icm) : 90A
  • Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 30A
  • Power - Max : 339W
  • Input Type : Standard
  • Gate Charge : 208nC
  • Reverse Recovery Time (trr) : 730ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247-3
221
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IRGSL4062DPBF
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 48A 250W TO262
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 48A
  • Current - Collector Pulsed (Icm) : 96A
  • Vce(on) (Max) @ Vge, Ic : 1.95V @ 15V, 24A
  • Power - Max : 250W
  • Switching Energy : 115µJ (on), 600µJ (off)
  • Input Type : Standard
  • Gate Charge : 50nC
  • Td (on/off) @ 25°C : 41ns/104ns
  • Test Condition : 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 89ns
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package : TO-262
378
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IRGS4062DPBF
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 48A 250W D2PAK
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 48A
  • Current - Collector Pulsed (Icm) : 96A
  • Vce(on) (Max) @ Vge, Ic : 1.95V @ 15V, 24A
  • Power - Max : 250W
  • Switching Energy : 115µJ (on), 600µJ (off)
  • Input Type : Standard
  • Gate Charge : 50nC
  • Td (on/off) @ 25°C : 41ns/104ns
  • Test Condition : 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 89ns
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package : D2PAK
254
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IRGS4056DPBF
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 24A 140W D2PAK
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 24A
  • Current - Collector Pulsed (Icm) : 48A
  • Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 12A
  • Power - Max : 140W
  • Switching Energy : 75µJ (on), 225µJ (off)
  • Input Type : Standard
  • Gate Charge : 25nC
  • Td (on/off) @ 25°C : 31ns/83ns
  • Test Condition : 400V, 12A, 22Ohm, 15V
  • Reverse Recovery Time (trr) : 68ns
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package : D2PAK
119
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IXST30N60B
IXYS
Transistors-IGBTs - Single
IGBT 600V 55A 200W TO268
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : PT
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 55A
  • Current - Collector Pulsed (Icm) : 110A
  • Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 30A
  • Power - Max : 200W
  • Switching Energy : 1.5mJ (off)
  • Input Type : Standard
  • Gate Charge : 100nC
  • Td (on/off) @ 25°C : 30ns/150ns
  • Test Condition : 480V, 30A, 4.7Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package : TO-268
128
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IXSH30N60C
IXYS
Transistors-IGBTs - Single
IGBT 600V 55A 200W TO247AD
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : PT
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 55A
  • Current - Collector Pulsed (Icm) : 110A
  • Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 30A
  • Power - Max : 200W
  • Switching Energy : 700µJ (off)
  • Input Type : Standard
  • Gate Charge : 100nC
  • Td (on/off) @ 25°C : 30ns/90ns
  • Test Condition : 480V, 30A, 4.7Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247AD (IXSH)
443
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IXSH30N60B
IXYS
Transistors-IGBTs - Single
IGBT 600V 55A 200W TO247AD
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : PT
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 55A
  • Current - Collector Pulsed (Icm) : 110A
  • Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 30A
  • Power - Max : 200W
  • Switching Energy : 1.5mJ (off)
  • Input Type : Standard
  • Gate Charge : 100nC
  • Td (on/off) @ 25°C : 30ns/150ns
  • Test Condition : 480V, 30A, 4.7Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247AD (IXSH)
439
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IXSH25N120A
IXYS
Transistors-IGBTs - Single
IGBT 1200V 50A 200W TO247AD
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 50A
  • Current - Collector Pulsed (Icm) : 80A
  • Vce(on) (Max) @ Vge, Ic : 4V @ 15V, 25A
  • Power - Max : 200W
  • Switching Energy : 9.6mJ (off)
  • Input Type : Standard
  • Gate Charge : 120nC
  • Td (on/off) @ 25°C : 100ns/450ns
  • Test Condition : 960V, 25A, 18Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247AD (IXSH)
105
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IXGR120N60B
IXYS
Transistors-IGBTs - Single
IGBT 600V 156A 520W ISOPLUS247
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HiPerFAST™
  • IGBT Type : PT
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 156A
  • Current - Collector Pulsed (Icm) : 300A
  • Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
  • Power - Max : 520W
  • Switching Energy : 2.4mJ (on), 5.5mJ (off)
  • Input Type : Standard
  • Gate Charge : 350nC
  • Td (on/off) @ 25°C : 60ns/200ns
  • Test Condition : 480V, 100A, 2.4Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : ISOPLUS247™
  • Supplier Device Package : ISOPLUS247™
383
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IXGK120N60B
IXYS
Transistors-IGBTs - Single
IGBT 600V 200A 660W TO264AA
  • Manufacturer : IXYS
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HiPerFAST™
  • IGBT Type : PT
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 200A
  • Current - Collector Pulsed (Icm) : 300A
  • Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 120A
  • Power - Max : 660W
  • Switching Energy : 2.4mJ (on), 5.5mJ (off)
  • Input Type : Standard
  • Gate Charge : 350nC
  • Td (on/off) @ 25°C : 60ns/200ns
  • Test Condition : 480V, 100A, 2.4Ohm, 15V
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-264-3, TO-264AA
  • Supplier Device Package : TO-264 (IXGK)
478
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FGPF70N33BTTU
ON Semiconductor
Transistors-IGBTs - Single
IGBT 330V 48W TO220F
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 330V
  • Current - Collector Pulsed (Icm) : 220A
  • Vce(on) (Max) @ Vge, Ic : 1.7V @ 15V, 70A
  • Power - Max : 48W
  • Input Type : Standard
  • Gate Charge : 49nC
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-220-3 Full Pack
  • Supplier Device Package : TO-220F
399
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FGA70N33BTDTU
ON Semiconductor
Transistors-IGBTs - Single
IGBT 330V 149W TO3P
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench
  • Voltage - Collector Emitter Breakdown (Max) : 330V
  • Current - Collector Pulsed (Icm) : 220A
  • Vce(on) (Max) @ Vge, Ic : 1.7V @ 15V, 70A
  • Power - Max : 149W
  • Input Type : Standard
  • Gate Charge : 49nC
  • Reverse Recovery Time (trr) : 23ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-3P-3, SC-65-3
  • Supplier Device Package : TO-3P
428
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STGW33IH120D
STMicroelectronics
Transistors-IGBTs - Single
IGBT 1200V 60A 220W TO247
  • Manufacturer : STMicroelectronics
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerMESH™
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 60A
  • Current - Collector Pulsed (Icm) : 45A
  • Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 20A
  • Power - Max : 220W
  • Switching Energy : 1.5mJ (on), 3.4mJ (off)
  • Input Type : Standard
  • Gate Charge : 127nC
  • Td (on/off) @ 25°C : 46ns/284ns
  • Test Condition : 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 85ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : TO-247 Long Leads
392
More on Order
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