GT10J312(Q)
| Part Number | GT10J312(Q) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | IGBT 600V 10A 60W TO220SM |
GT10J312(Q) Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | GT10J312(Q) PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | IGBTs - Single |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 10A |
| Current - Collector Pulsed (Icm) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 400ns/400ns |
| Test Condition | 300V, 10A, 100Ohm, 15V |
| Reverse Recovery Time (trr) | 200ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-220SM |
Quick Inquiry
| In Stock | 435 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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