APT70GR65B2SCD30

Part Number
APT70GR65B2SCD30
Manufacturer
Microsemi
Category
Transistors
Description
INSULATED GATE BIPOLAR TRANSISTO
APT70GR65B2SCD30 Specifications
RoHS No RoHS Information
EDA/CAD Models APT70GR65B2SCD30 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Microsemi
Product Line Semiconductors
Subcategory IGBTs - Single
Series *
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 134A
Current - Collector Pulsed (Icm) 260A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A
Power - Max 595W
Switching Energy -
Input Type -
Gate Charge 305nC
Td (on/off) @ 25°C 19ns/170ns
Test Condition 433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package T-MAX™ [B2]
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