APTM100VDA35T3G
| Part Number | APTM100VDA35T3G |
| Manufacturer | Microsemi |
| Category | Transistors |
| Description | MOSFET 2N-CH 1000V 22A SP3 |
APTM100VDA35T3G Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | APTM100VDA35T3G PCB Footprint and Symbol |
| Brand | Microsemi |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | POWER MOS 7® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
Quick Inquiry
| In Stock | 484 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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