| RoHS |
No RoHS Information
|
| EDA/CAD Models |
BC639,116 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Single |
| Series |
- |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1A |
| Voltage - Collector Emitter Breakdown (Max) |
80V |
| Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
63 @ 150mA, 2V |
| Power - Max |
830mW |
| Frequency - Transition |
180MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package |
TO-92-3 |
