| RoHS |
No RoHS Information
|
| EDA/CAD Models |
BC875,126 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Single |
| Series |
- |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
1A |
| Voltage - Collector Emitter Breakdown (Max) |
45V |
| Vce Saturation (Max) @ Ib, Ic |
1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) |
50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 500mA, 10V |
| Power - Max |
830mW |
| Frequency - Transition |
200MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package |
TO-92-3 |
