BUK9E6R1-100E,127

Part Number
BUK9E6R1-100E,127
Manufacturer
NXP
Category
Transistors
Description
MOSFET N-CH 100V 120A I2PAK
BUK9E6R1-100E,127 Specifications
RoHS No RoHS Information
EDA/CAD Models BUK9E6R1-100E,127 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand NXP
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 133nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17460pF @ 25V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Quick Inquiry
In Stock338 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1
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