| RoHS |
No RoHS Information
|
| EDA/CAD Models |
CSD25310Q2 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Texas Instruments |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Single |
| Series |
NexFET™ |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs |
23.9mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
4.7nC @ 4.5V |
| Vgs (Max) |
±8V |
| Input Capacitance (Ciss) (Max) @ Vds |
655pF @ 10V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.9W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-WSON (2x2) |
| Package / Case |
6-WDFN Exposed Pad |
