EPC2012C

Part Number
EPC2012C
Manufacturer
EPC
Category
Transistors
Description
GANFET TRANS 200V 5A BUMPED DIE
EPC2012C Specifications
RoHS No RoHS Information
EDA/CAD Models EPC2012C PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand EPC
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (4-Solder Bar)
Package / Case Die
Quick Inquiry
In Stock15640 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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