EPC2019
| Part Number | EPC2019 |
| Manufacturer | EPC |
| Category | Transistors |
| Description | GAN TRANS 200V 8.5A BUMPED DIE |
EPC2019 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2019 PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | EPC |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Single |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 7A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
Quick Inquiry
| In Stock | 11709 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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