FGD3N60LSDTM-T

Part Number
FGD3N60LSDTM-T
Manufacturer
ON Semiconductor
Category
Transistors
Description
INTEGRATED CIRCUIT
FGD3N60LSDTM-T Specifications
RoHS No RoHS Information
EDA/CAD Models FGD3N60LSDTM-T PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand ON Semiconductor
Product Line Semiconductors
Subcategory IGBTs - Single
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 6A
Current - Collector Pulsed (Icm) 25A
Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A
Power - Max 40W
Switching Energy 250µJ (on), 1mJ (off)
Input Type Standard
Gate Charge 12.5nC
Td (on/off) @ 25°C 40ns/600ns
Test Condition 480V, 3A, 470Ohm, 10V
Reverse Recovery Time (trr) 234ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
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