HN1B01F-GR(TE85L,F

Part Number
HN1B01F-GR(TE85L,F
Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors
Description
TRANS NPN/PNP 50V 0.15A SM6
HN1B01F-GR(TE85L,F Specifications
RoHS No RoHS Information
EDA/CAD Models HN1B01F-GR(TE85L,F PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Toshiba Semiconductor and Storage
Product Line Semiconductors
Subcategory Bipolar (BJT) - Arrays
Series -
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 120MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SM6
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