HN3C10FUTE85LF
| Part Number | HN3C10FUTE85LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | RF TRANS 2 NPN 12V 7GHZ US6 |
HN3C10FUTE85LF Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | HN3C10FUTE85LF PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - RF |
| Series | - |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Gain | 11.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
Quick Inquiry
| In Stock | 458 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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