HN3C10FUTE85LF
Part Number | HN3C10FUTE85LF |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Transistors |
Description | RF TRANS 2 NPN 12V 7GHZ US6 |
HN3C10FUTE85LF Specifications
RoHS | No RoHS Information |
EDA/CAD Models | HN3C10FUTE85LF PCB Footprint and Symbol |
Warranty | Up to 1 year [Limited-Warranty]* |
Brand | Toshiba Semiconductor and Storage |
Product Line | Semiconductors |
Subcategory | Bipolar (BJT) - RF |
Series | - |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Quick Inquiry
In Stock | 458 - More on Order |
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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