| RoHS |
No RoHS Information
|
| EDA/CAD Models |
ISP25DP06LMSATMA1 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Infineon Technologies |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Single |
| Series |
OptiMOS™ |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
250mOhm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs |
13.9nC @ 10V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
420pF @ 30V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.8W (Ta), 5W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-SOT223 |
| Package / Case |
TO-261-3 |
