IXTD1R4N60P 11

Part Number
IXTD1R4N60P 11
Manufacturer
IXYS
Category
Transistors
Description
MOSFET N-CH 600V
IXTD1R4N60P 11 Specifications
RoHS No RoHS Information
EDA/CAD Models IXTD1R4N60P 11 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand IXYS
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series PolarHV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
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In Stock113 - More on Order
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