IXTM12N100

Part Number
IXTM12N100
Manufacturer
IXYS
Category
Transistors
Description
POWER MOSFET TO-3
IXTM12N100 Specifications
RoHS No RoHS Information
EDA/CAD Models IXTM12N100 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand IXYS
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series GigaMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA
Package / Case TO-204AA, TO-3
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In Stock144 - More on Order
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