MT3S111TU,LF

Part Number
MT3S111TU,LF
Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
MT3S111TU,LF Specifications
RoHS No RoHS Information
EDA/CAD Models MT3S111TU,LF PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Toshiba Semiconductor and Storage
Product Line Semiconductors
Subcategory Bipolar (BJT) - RF
Series -
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain 12.5dB
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads
Supplier Device Package UFM
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In Stock263 - More on Order
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