MT3S111TU,LF
| Part Number | MT3S111TU,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | RF SIGE NPN BIPOLAR TRANSISTOR N |
MT3S111TU,LF Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | MT3S111TU,LF PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - RF |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Gain | 12.5dB |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | UFM |
Quick Inquiry
| In Stock | 263 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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