PHD18NQ10T,118
Part Number | PHD18NQ10T,118 |
Manufacturer | NXP |
Category | Transistors |
Description | MOSFET N-CH 100V 18A DPAK |
PHD18NQ10T,118 Specifications
RoHS | No RoHS Information |
EDA/CAD Models | PHD18NQ10T,118 PCB Footprint and Symbol |
Warranty | Up to 1 year [Limited-Warranty]* |
Brand | NXP |
Product Line | Semiconductors |
Subcategory | FETs, MOSFETs - Single |
Series | TrenchMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Quick Inquiry
In Stock | 339 - More on Order |
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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