RoHS |
No RoHS Information
|
EDA/CAD Models |
PMT760EN,115 PCB Footprint and Symbol |
Warranty |
Up to 1 year [Limited-Warranty]* |
Brand |
NXP |
Product Line |
Semiconductors |
Subcategory |
FETs, MOSFETs - Single |
Series |
- |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
900mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
950mOhm @ 800mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
3nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 80V |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta), 6.2W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-223 |
Package / Case |
TO-261-4, TO-261AA |