PSMN8R5-108ESQ
| Part Number | PSMN8R5-108ESQ |
| Manufacturer | NXP |
| Category | Transistors |
| Description | MOSFET N-CH 108V 100A I2PAK |
PSMN8R5-108ESQ Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | PSMN8R5-108ESQ PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | NXP |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Single |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 108V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 111nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Quick Inquiry
| In Stock | 306 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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