RQK0609CQDQS#H1

Part Number
RQK0609CQDQS#H1
Manufacturer
Renesas Electronics America
Category
Transistors
Description
MOSFET P-CH UPAK
RQK0609CQDQS#H1 Specifications
RoHS No RoHS Information
EDA/CAD Models RQK0609CQDQS#H1 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Renesas Electronics America
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package UPAK
Package / Case TO-243AA
Quick Inquiry
In Stock479 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1
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