| Product Line |
Semiconductors |
| Subcategory |
IGBTs - Single |
| Brand |
Hangzhou Silan Microelectronics |
| Technology Category |
Discrete Semiconductor Products |
| RoHS |
Pb free |
| Package |
TO-247-3L |
| Type |
N-channel |
| V(BR)CES (Collector to Emitter Breakdown Voltage) |
650V |
| VGE (Gate to Emitter Voltage) |
±20V |
| IC (Collector Current) @25°C |
140A |
| IC (Collector Current) @100°C |
70A |
| ICM (Pulsed Collector Current) |
210A |
| PD (Power Dissipation) @25°C |
321W |
| TJ (Operating Junction Temperature) |
-55°C ~ +150°C |
| Tstg (Storage Temperature Range) |
-55°C ~ +150°C |
| VCE(sat) (Collector to Emitter Saturation Voltage) @25°C |
2.3V (Typical) |
| VCE(sat) (Collector to Emitter Saturation Voltage) @125°C |
2.6V (Typical) |
| VGE(th) (Gate Threshold Voltage) |
5.0V (Typical) |
| ICES (Collector Cut-off Current) |
200μA (Max) |
| IGES (Gate Leakage Current) |
±400nA (Max) |
| Cies (Input Capacitance) |
2850pF (Typical) |
| Coes (Output Capacitance) |
294pF (Typical) |
| Cres (Reverse Transfer Capacitance) |
85pF (Typical) |
| td(on) (Turn-On Delay Time) |
40ns (Typical) |
| tr (Rise Time) |
171ns (Typical) |
| td(off) (Turn-Off Delay Time) |
211ns (Typical) |
| tf (Fall Time) |
141ns (Typical) |
| Eon (Turn-On Switching Loss) |
4.9mJ (Typical) |
| Eoff (Turn-Off Switching Loss) |
2.5mJ (Typical) |
| Ets (Total Switching Loss) |
7.4mJ (Typical) |
| Qg (Total Gate Charge) |
189nC (Typical) |
| Qge (Gate to Emitter Charge) |
28nC (Typical) |
| Qgc (Gate to Collector Charge) |
107nC (Typical) |
| FRD Forward Voltage @25°C |
1.8V (Typical) |
| FRD Forward Voltage @125°C |
1.5V (Typical) |
| trr (Reverse Recovery Time) |
50ns (Typical) |
| Qrr (Reverse Recovery Charge) |
140nC (Typical) |
| Thermal Resistance, Junction to Case (IGBT) |
0.39°C/W |
| Thermal Resistance, Junction to Case (FRD) |
1.10°C/W |
| Thermal Resistance, Junction to Ambient |
40°C/W |
